Department of Physics,National Taiwan University

• August 2011 – present: Professor, Graduate Institute of Applied Physics and Dept. of Phys., National Taiwan Univ., Taipei, Taiwan. 
• Spintronics and Topological insulators 
• Nano-electronics in InGaAs, GaN, GaSb, and Ge MOS for science and technologies beyond 7-5 nm node CMOS 
• Nano-epitaxy and Probing high k dielectrics and semiconductor interface in an atomic scale 
• June 2003 – Aug. 2011: Professor, Dept. Materials Science and Eng., National Tsing Hua University, Hsin Chu, Taiwan. 
• Aug. 2009 – July 2010: Director, Ctr. for Nanotechnology, Materials Sci., and Microsystems, Natl Tsing Hua U., Hsin Chu, Taiwan. 
• Feb. 2001 – March 2003: Distinguished Member of Technical Staff, High Speed Electronic Devices and Photonic Interfaces Research, Agere Systems, Murray Hill, NJ. (Agere became a fully separate, publicly traded company on June 1, 2002.) 
• July 1999 – January 2001: Distinguished Member of Technical Staff, Semiconductor Research Laboratory, Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey. 
• Sept. 1981 – June 1999: Member of Technical Staff, Semiconductor Res. Lab. and Materials Res. Lab., Bell Labs, Murray Hill, NJ. 
• Multiple-chamber UHV/molecular beam epitaxy (MBE) system – growing novel hetero-structures of metal/semiconductor, oxide/semiconductor, and metal/oxide/semiconductor with excellent interfacial properties for both fundamental studies and device applications (high speed, low power electronic devices, and high k dielectrics for Si CMOS and III-V MOS). 
• All vacuum in-situ processing - electron cyclotron resonance (ECR) plasma etching and MBE re-growth - new electronic materials, novel growth techniques, high performance electronic/opto-electronic devices, and innovative processing. 
• High Tc oxide superconductors - thin film synthesis by sputtering and MBE. 
• Magnetic thin films - amorphous rare earth transition metal materials for magneto-optical recording. 
• Magnetic rare earth superlattices grown by MBE - magnetic and spin-structure characterization. 
• A15 superconductors - fabrication and characterization of flexible Nb(Ta)-Sn wires by liquid infiltration. 
• August 1980 - August 1981: Staff Scientist II, Materials and Molecular Research Division, Lawrence Berkeley Lab., Univ. of Calif. 
• High Hc, high Jc A15 Nb3Sn and Nb3Al wires by bronze process and solid-state precipitation for high energy physics accelerator and fusion reactor magnets.

• 2016-present Nano Device Laboratory (NDL), 合聘特聘研究員. 
• 2011-present National Taiwan University Distinguished Professorship台灣大學特聘教授. 
• 2009-2011 Tsing Hua Chair Professorship清華大學講座教授. 
• 2003-2009 TSMC Endowed Chair Professorship台積電講座教授. 
• 1999 Distinguished Technical Staff (DMTS) Award for sustained research achievements by Bell Laboratories, Lucent Technologies. 貝爾實驗室特聘研究員 (The citation reads: “You are being honored for development of a novel oxide, Ga2O3(Gd2 O3), to effectively passivate GaAs having a low interface state density range. You have used this thermodynamically and photo-chemically stable oxide to demonstrate the formation of inversion layers in both n- and p-type GaAs, which have eluded scientists and engineers around the world for more than three decades. You demonstrated the world’s first enhancement- and depletion-mode GaAs MOSFETs with stable high current densities without hysteresis. This may have applications (both analog and digital) in high speed electronic components and systems. Your work in material science has continued to keep Bell Labs – Lucent Technologies at the forefront in science and technology.”) 
• Fellow, American Physical Society (The citation reads: “For pioneering in III-V semiconductor metal oxide semiconductor field effect transistors including the landmark discovery of high dielectric constant oxide films on GaAs surface with low interface states and unpinned Fermi level and the first demonstration of inversion-channel GaAs MOSFET, timely for science and technology beyond Si CMOS. ”) 
• Fellow, IEEE (Institute of Electrical and Electronics Engineers, Inc.) (The citation reads: “for contributions to III-V semiconductor MOSFET transistors”) 
• Fellow, Physical Society of Republic of China, Taiwan (The citation reads: “藉由新穎奈米磊晶，掌控氧化物與Ⅲ-Ⅴ族半導體的介面，奠定下世代元件科學根基，貢獻卓越。”) 
• Web of Science Total citations: 10,200+, Hirsch Citation Index: 54; Google Scholar Total citations: 12,900+, H index: 57, with 5 publications being cited 300+ and 28 publications being cited 100+ 
• 705th among the ISI's 1120 Most Cited Physicists (1981-1997) ranked by total citations in physics, astrophysics, materials science, chemical physics, and the related fields. (http://pcb4122.univ-lemans.fr/1120physiciens.html)

Professor Hong has worked in different research topics, from superconductivity, magnetism, semiconductor lasers, to advanced electronic devices. In 1994, he and his colleagues at Bell Labs discovered a novel oxide of Ga₂O₃(Gd₂O₃), which gives the oxide-GaAs hetero-structure a low interfacial density of states in mid-range of 10¹¹ cm^-2 eV^-1, thus solving a problem which has puzzled researchers for the last 35 years. This has led to the first demonstration of inversion-channel GaAs/InGaAs MOSFETs, the Holy Grail in compound semiconductor electronics.

From 2003 to now, he and Professor J. Raynien Kwo, and their research groups have made landmark contributions to achieve very low interfacial densities of states, very low electrical current leakage, high-temperature (900^oC) stability of the high k/III-V (and Ge) MOS, surface Fermi level unpinning mechanism, sub-nm EOT in the high k’s in III-V and Ge, among many other critical properties, essential for the technology beyond 7-5 nm node CMOS. Moreover, they have fabricated self-aligned inversion- channel InGaAs MOSFETs with world-record high drain currents and transconductances.

2015

• Achieving record high extrinsic drain current >1.8 mA/μm and transconductance >0.95 mS/μm in 1m in self-aligned inversion-channel In_0.53Ga_0.47As metal-oxide-semiconductor field-effect transistors with in-situ deposited ALD-Al₂O₃ as gate dielectrics
• Self-aligned inversion-channel n-InGaAs, p-GaSb, and p-Ge MOSFETs with a common high k gate dielectric using a CMOS compatible process
• Single-crystal Y₂O₃ epitaxially on GaAs(001) and (111) using atomic layer deposition with extremely small frequency dispersion at accumulation in the CV curves and interfacial trap density in 2-4 x 10¹¹ cm^-2eV^-1 using conductance method

2014

• Greatly improved interfacial passivation of in-situ high dielectric deposition on freshly grown molecule beam epitaxy Ge epitaxial layer on Ge(100)
• Observation of Strongly Enhanced Inverse Spin Hall Voltage in Fe₃Si/GaAs Structures

2013

• Achieving record high drain current >1.5 mA/μm and transconductance >1.0 mS/μm in 1μm gate length self-aligned inversion-channel In_0.53Ga_0.47As metal-oxide-semiconductor field-effect transistors with in-situ deposited ALD-HfO₂ as gate dielectrics
• Effectively passivating GaSb with UHV-deposited and ALD-Y₂O₃, achieving very low interfacial trap densities and record high drain currents in self-aligned inversion-channel GaSb MOSFETs

2012

• Both ALD- and MBE-HfO₂ based high-κ dielectrics on In_0.53Ga_0.47As and In_0.2Ga_0.8As with low D_it’s, excellent thermodynamic stability, and outstanding oxide scalability, thus breaking the myth that tetravalent oxides such as HfO₂ could not give an excellent high-κ/InGaAs interface
• First to probe atom-to-atom interactions for atomic layer deposition of trimethylaluminum/H₂O on Ga-rich GaAs(001)- 4x6 and As-rich GaAs(001)-2x4 surfaces using in-situ synchrotron-radiation photoemission

2011

• Achieving record high drain current >1.5 mA/μm in self-aligned inversion-channel In_0.53Ga_0.47As metal-oxide-semiconductor field-effect transistors with in-situ deposited Al₂O₃/Y₂O₃as gate dielectrics
• Direct determination of flat-band voltage for metal/high oxide/semiconductor heterointerfaces by electric-field- induced second-harmonic generation
• Achieving a record-low interfacial density of states with a flat distribution in Ga₂O₃(Gd₂O₃) directly deposited on GeAtomic-scale determination of band offsets at Gd₂O₃/GaAs (100) hetero-interface using scanning tunneling spectroscopy type

2010

• Attainment of low interfacial trap density absent of a large mid-gap peak in In_0.2Ga_0.8As by Ga₂O₃(Gd₂O₃) passivation
• In-situ ALD Al₂O₃ on GaAs – achieving more symmetrical CVs, unparalleled by comparing with other ALD approaches, which give good CVs for p-type, but poor for n-type
• In-situ synchrotron photoemission studies on high k’s on GaAs and Ge in attaining detailed interfacial atomic/ chemical bonding
• Effective reduction of interfacial traps in Al₂O₃/GaAs (001) gate stacks using surface engineering and thermal annealing

2009

• Achieving drain current enhancement and negligible current collapse in GaN metal-oxide-semiconductor field-effect-transistor with aid of high-quality ALD-oxides/GaN interface.
• Achieving nanometer-thick 0.5 nm CET single-crystal hexagonal Gd₂O₃ on GaN with exceptional high-temperature thermal stability (1100 ^oC) for advanced complementary metal-oxide-semiconductor technology
• Achieving nanometer-thick 0.6 nm CET amorphous/single-crystal Ga₂O₃(Gd₂O₃) on InGaAs with exceptional high-temperature thermal stability (900^oC) for advanced complementary metal-oxide-semiconductor technology
• Achieving Ga₂O₃(Gd₂O₃) on Ge without interfacial layers and also a low EOT of 0.6 nm

2008

• First to achieve an EOT of 1.0 nm in both MBE and ALD oxide deposited on InGaAs
• Achieving low interfacial trap density in atomic layer deposited (ALD) Al2O3 on In_0.53Ga_0.47As
• Single crystal GaN on Si with nm-thick single crystal Sc₂O₃ and Al₂O₃ as a template
• UHV high k dielectrics of Ga₂O₃(Gd₂O₃), HfO₂, and Y₂O₃ on Ge without interfacial layers – achieving excellent electrical properties

2007

• First to demonstrate a self-aligned inversion-channel Ga2O3(Gd₂O₃)/InGaAs MOSFET with world-record device performance in terms of drain currents of >1mA/μm and transconductance of > 0.7 mS/μm in a 1μm gate length device
• First to achieve true inversion-channel GaN metal-oxide-semiconductor field-effect transistor with atomic-layer- deposited Al₂O₃ as gate dielectric
• First self-aligned inversion n-channel InGaAs/GaAs metal-oxide-semiconductor field-effect-transistors with TiN gate and Ga₂O₃(Gd₂O₃) dielectric
• First to use atomic-layer-deposited (ALD) HfO₂ on In_0.53Ga_0.47As: passivation and energy-band parameters

2006

• Cubic HfO₂ doped with Y₂O₃ epitaxial films on GaAs (001) of enhanced dielectric constant of 34
• First to determine energy-band parameters of atomic-layer-deposition-Al₂O₃/InGaAs heterostructures

2005

• First to understand the mechanism of Fermi-level unpinning in ALD grown Al₂O₃ on InGaAs
• A novel approach of using a molecular beam epitaxy grown template for subsequent atomic layer deposition of high dielectrics on Si without any interfacial layer to achieve a very low EOT
• Growth of perfected nano-thick single crystal oxide films (gamma Al₂O₃ and Sc₂O₃) on Si

2004

• First to achieve high-temperature thermodynamic stability and low interfacial density of states in Ga₂O₃ (Gd₂O₃)/GaAs interface – a must for self-aligned inversion-channel InGaAs MOSFET’s
• First to grow all single-crystal heterostructures in GaN/Rare Earth Oxides (Gd₂O₃, Y₂O₃)/GaN with sharp interfaces and a low interfacial density of states in each interface

2003

• Fabrication of GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition (ALD)

2002

• First to grow a all single crystal heterostructure in GaN/Rare Earth Oxides (Gd₂O₃, Y₂O₃)/GaN with sharp interfaces and a low interfacial density of states in each interface (opening up a possibility of building three-dimensional integrate circuits)
• Direct atomic structure determination of epitaxially grown films: Gd₂O₃ on GaAs (100)

2001

• First to achieve a chemically abrupt, atomically sharp oxide/Si interface with a low interracial density of states using an e-beam/UHV (MBE) approach (a very significant accomplishment in microelectronics in replacing SiO₂ with high-k gate dielectrics)

2000

• First to demonstrate a GaAs CMOS inverter
• First to grow hcp single crystal rare earth oxides (a high temperature phase) on GaN with a low interfacial density of states
• First to grow a new fcc Gd₂O₃ phase on GaAs

Web of Science Total citations: 10,200+, Hirsch Citation Index: 54; Google Scholar Total citations: 12,900+, H index: 57, with 5 publications being cited 300+ and 28 publications being cited 100+

Hong's updated publications in Google Scholar

1. “Self-aligned inversion-channel n-InGaAs, p-GaSb, and p-Ge MOSFETs with a common high j gate dielectric using a CMOS compatible process”, C.H. Fu, Y.H. Lin, W.C. Lee, T.D. Lin, R.L. Chu, L.K. Chu, P. Chang, M.H. Chen, W.J. Hsueh, S.H. Chen, G.J. Brown, J.I. Chyi, J. Kwo, and M. Hong, Microelectronic Engineering, 147,  Pages 330–334 (2015).  1 November 2015.

2. “Single-crystal atomic layer deposited Y₂O₃ on GaAs(001) - growth, structural, and electrical characterization”, S.Y. Wu, K.H. Chen, Y.H. Lin, C.K. Cheng, C.H. Hsu, J. Kwo, M. Hong, Microelectronic Engineering, 147,  310–313 (2015).  1 November 2015

3. “Reconstruction at the interface of 1 cycle of tri[methylaluminum] and water on GaAs(111)A-2x2 from atomic layer deposition”, T. H. Chiang, Y. T. Fanchiang, R. L. Chu, T. W. Pi, G. K. Wertheim, J. Kwo, and M. Hong, to be submitted to APEx, June, 2015

4. “Interference of coherent acoustic phonons excited below exciton resonance in a c-plane ZnO epi-film on oxide-buffered Si(111)”, J. H. Lin, W. R. Liu, M. Hong, J. Kwo, C. H. Hsu, and W. F. Hsieh, submitted to Optics Letters,  May 2015.

5. “Strongly enhanced spin current in topological insulator/ferromagnetic metal heterostructures by spin pumping”, C. N. Wu, Y. H. Lin, Y. T. Fanchiang, H. Y. Hung, H. Y. Lin, P. H. Lin, J. G. Lin,  S. F. Lee, M. Hong, and J. Kwo, Journal of Applied Physics 117, 17D148 (2015).

6. “In-situ atomic layer deposition of tri-methylaluminum and water on pristine single-crystal (In)GaAs surfaces: electronic and electric structures”, T. W. Pi, Y. H. Lin, Y. T. Fanchiang, T. H. Chiang, C. H. Wei, Y. C. Lin, G. K. Wertheim, J. Kwo, and M Hong, Nanotechnology 26 164001 (2015). Online publication April 1, 2015. doi:10.1088/0957-4484/26/16/164001

7. “Passivation of GaSb using molecular beam epitaxy Y₂O₃ to achieve low interfacial trap density and high-performance self-aligned inversion-channel p-metal-oxide-semiconductor field-effect-transistors”, R. L. Chu (朱瑞霖), T. H. Chiang (江宗鴻), W. J. Hsueh (薛惟仁), K. H. Chen (陳冠雄), K. Y. Lin (林耕雍), G. J. Brown, J. I. Chyi (綦振瀛), J. Kwo (郭瑞年), and M. Hong (洪銘輝) Appl. Phys. Lett. 105, 182106 (2014). November 3, 2014.

8.  “Observation of Strongly Enhanced Inverse Spin Hall Voltage in Fe₃Si/GaAs Structures”, H. Y. Hung, T. H. Chiang, B. Z. Syu, Y. T. Fanchiang, J. G. Lin, S. F. Lee, M. Hong, and J. Kwo, Appl. Phys. Lett. 105, 152413 (2014). October 13, 2014

9. “Single crystal Gd₂O₃ epitaxially on GaAs(111)A”, Tsung-Hung Chiang, Shao-Yun Wu, Tsung-Shiew Huang, Chia-Hung Hsu, J. Raynien Kwo, and Minghwei Hong, CrystEngComm, 16, 8457-8462  (2014). September 28 issue 36 DOI: 10.1039/C4CE00734D 2014

10.  “III-V Compound Semiconductor Transistors – From Planar to Nanowire Structures”, Heike Riel*, Lars-Erik Wernersson, Minghwei Hong, Jesús A. del Alamo, MRS Bulletin 39 668-677 August 2014.

11.  “Greatly improved interfacial passivation of in-situ high dielectric deposition on freshly grown molecule beam epitaxy Ge epitaxial layer on Ge(100)”, R. L. Chu (朱瑞霖), Y. C. Liu (劉有騏), W. C. Lee (李威縉), T. D. Lin (林宗達), M. L. Huang (黃懋霖), T. W. Pi (皮敦文), J. Kwo (郭瑞年), and M. Hong (洪銘輝), Appl. Phys. Lett. 104, 202102 (2014); doi: 10.1063/1.4879022

12. “High k/InGaAs for ultimate CMOS – interfacial passivation, low ohmic contacts, and device performance (Invited)”, W. H. Chang, T. D. Lin, M. H. Liao, T. W. Pi, J. Kwo, and M. Hong,  ECS Transactions, 61(2), 113-124 (2014).

13. “Semiconductor-insulator Interfaces, High κ Dielectrics on (In)GaAs”, Standard Article Wiley Encyclopedia of Electrical and Electronics Engineering, T.W. Pi, T.D. Lin, W.H. Chang, Y.C. Chang, M. Hong and J. Kwo, Published Online: 25 April 2014, ISBN: 9780471346081 DOI: 10.1002/047134608X.W3226.pub2 

14. “Synchrotron radiation photoemission study of interfacial electronic structure of HfO₂ on In_0.53Ga_0.47As(001)-4x2 from atomic layer deposition”, T. W. Pi, T. D. Lin, H. Y. Lin, Y. C. Chang, G. K. Wertheim, J. Kwo, and M. Hong, Appl. Phys. Lett. 104, 042904 (2014).

15. “High-performance self-aligned inversion-channel In_0.53Ga_0.47As metal-oxide-semiconductor field-effect-transistors by in-situ atomic-layer-deposited HfO₂”, T. D. Lin (林宗達), W. H. Chang (張文馨), R. L. Chu (朱瑞霖), Y. C. Chang (張耀中), Y. H. Chang (張宇行), M. Y. Lee (李美儀), P. F. Hong (洪鵬飛), Min-Cheng Chen (陳旻政), J. Kwo (郭瑞年), and M. Hong (洪銘輝), Appl. Phys. Lett. 103, 253509 (2013).

16. “Surface Passivation of GaSb(100) Using Molecular Beam Epitaxy of Y₂O₃ and Atomic Layer Deposition of Al₂O₃: A Comparative Study”, R.-L. Chu, W.-J. Hsueh, T.-H. Chiang, W.-C. Lee, H.-Y. Lin, T.-D. Lin, G. J. Brown, J.-I. Chyi, T.-S. Huang, T.-W. Pi, J. R. Kwo, and M. Hong, Appl. Phys. Express 6 121201 (2013).

17. “Surface atoms core-level shifts in single crystal GaAs surfaces: Interactions with trimethylaluminum and water prepared by atomic layer deposition”, T.W. Pi, H.Y. Lin, T.H. Chiang, Y.T. Liu, Y.C. Chang, T.D. Lin, G.K. Wertheim, J. Kwo, and M. Hong, Applied Surface Science 284, 601-610 (2013). [The article has been downloaded or viewed 321 times since publication (measured through 30 April, 2014).]

18. “Interfacial electronic structure of trimethyl-aluminum and water on an In_0.20Ga_0.80As(001)-4x2 surface: A high-resolution core-level photoemission study”, T. W. Pi (皮敦文), H. Y. Lin (林孝于) T. H. Chiang (江宗鴻), Y. T. Liu (劉雅婷), G. K. Wertheim, J. Kwo (郭瑞年), and M. Hong (洪銘輝), J. Appl. Phys. 113, 203703 (2013).

19. “Detection of inverse spin Hall effect in epitaxial ferromagnetic Fe₃Si films with normal metals Au and Pt”, H. Y. Hung, G. Y. Luo, Y. C. Chiu, P. Chang, W. C. Lee, J. G. Lin, S. F. Lee, M. Hong, and J. Kwo, J. Appl. Phys. 113, 17C507 (2013). 

20. “Ferromagnetism in cluster free, transition metal doped high k dilute magnetic oxides: Films and nanocrystals”, C. N. Wu, T. S. Wu, S. Y. Huang, W. C. Lee, Y. H. Chang, Y. L. Soo, M. Hong, and J. Kwo, J. Appl. Phys. 113, 17C309 (2013).

21. “Atom-to-atom interactions for atomic layer deposition of trimethylaluminum on Ga-rich GaAs(001)-4x6 and As-rich GaAs(001)-2x4 surfaces: A synchrotron-radiation photoemission study”, T.-W. Pi, H.-Y. Lin, Y.-T. Liu, T.-D. Lin, G. K. Wertheim, J. Kwo and M. Hong, Nanoscale Research Letters 8, 169 (2013).

22. “Inversion-channel GaAs(100) metal-oxide-semiconductor field-effect-transistors using molecular beam deposited Al₂O₃ as a gate dielectric on different reconstructed surfaces”, Y. C. Chang, W. H. Chang, C. Merckling, J. Kwo, and M. Hong, Appl. Phys. Lett. 102, 093506 (2013).  

23. “Phase transformation of molecular beam epitaxy-grown nanometer thick Gd₂O₃ and Y₂O₃ on GaN”, W. H. Chang, S. Y. Wu, C. H. Lee, T. Y. Lai, Y. J. Lee, P. Chang, C. H. Hsu, T. S. Huang, J. R. Kwo, and M. Hong, ACS Applied Materials & Interfaces 5, 1436 (2013).  

24. “Vertical-cavity and randomly scattered lasing from different thicknesses of epitaxial ZnO films grown on Y₂O₃-buffered Si (111)”, C. C. Kuo, W.-R. Liu, B. H. Lin, W. F. Hsieh, C.-H. Hsu, W. C. Lee, M. Hong, and J. Kwo, Optics Express 21, 1857 (2013).

25. “Growth mechanism of atomic layer deposited Al2O3 on GaAs(001)-4x6 surface with trimethylaluminum and water as precursors”, M. L. Huang, Y. H. Chang, T. D. Lin, S. Y. Lin, Y. T. Liu, T. W. Pi, M. Hong, and J. Kwo, Appl. Phys. Lett. 101, 212101 (2012) doi: 10.1063/1.4767129.

26. “Effective Passivation of In_0.2Ga_0.8As by HfO₂ Surpassing Al₂O₃ via in-situ Atomic Layer Deposition”, Y. H. Chang, C. A. Lin, Y. T. Liu, T. H. Chiang, H. Y. Lin, M. L. Huang, T. D. Lin, T. W. Pi, J. Kwo, and M. Hong, Appl. Phys. Lett. 101, 172104 (2012).

27. “Room temperature ferromagnetic behavior in cluster free, Co doped Y₂O₃ dilute magnetic oxide films”, C. N. Wu, S. Y. Huang, W. C. Lee, Y. H. Chang, T. S. Wu, Y. L. Soo, M. Hong, and J. Kwo, Appl. Phys. Lett. 101, 162403 (2012).

28. “Correlation Between Oxygen Vacancies and Magnetism in Mn-doped Y₂O₃ Nanocrystals Investigated by Defect Engineering Techniques”, T. S. Wu , Y. C. Chen , Y. F. Shiu , H. J. Peng , S. L. Chang , H. Y. Lee , P. P. Chu , C. W. Hsu , L.J. Chou , C.W. Pao , J.F. Lee, J. Kwo , M. Hong, and Y. L. Soo, Appl. Phys. Lett. 101, 022408 (2012) DOI: 10.1063/1.4732094.

29. “Metal Oxide Semiconductor Device Studies of Molecular-Beam-Deposited Al₂O₃/InP Heterostructures with Various Surface Orientations (001), (110), and (111)”, L.-K. Chu, C. Merckling, J. Dekoster, J.  R. Kwo, M. Hong, M. Caymax, and M. Heyns, Applied Physics Express 5, 061202 DOI: 10.1143/APEX.5.061202 (2012).

30. “Surface-atom core-level shift in GaAs(111)A-2x2”,  T. W. Pi, B. R. Chen, M. L. Huang, T. H. Chiang, G. K. Wertheim, M. Hong, and J. Kwo, J. Phys. Soc. Jpn. 81, 064603 DOI: 10.1143/JPSJ.81.064603 (2012).

31. “Realization of high-quality HfO₂ on In_0.53Ga_0.47As by in-situ atomic-layer-deposition”, T. D. Lin (林宗達), Y. H. Chang (張宇行), C. A. Lin (林俊安), M. L. Huang (黃懋霖), W. C. Lee (李威縉), J. Kwo (郭瑞年), and M. Hong (洪銘輝), Appl. Phys. Lett. 100, 172110 DOI: 10.1063/1.4706261 (2012)

32. “Optimization of ohmic metal contacts for advanced GaAs-based CMOS device”, W. H. Chang, T. H. Chiang, T. D. Lin, Y. H. Chen, K. H. Wu, T. S. Huang, M. Hong, and J. Kwo, J. Vac. Sci. Technol. B 30, 02B123 DOI: 10.1116/1.3687418 (2012).

33. “InAs MOS devices passivated with MBE-grown Gd₂O₃ dielectrics”, C. A. Lin, P.-C. Chiu, M. L. Huang, H.-K. Lin, T. H. Chiang_, W. C. Lee, Y. C. Chang, Y. H. Chang, J.-I. Chyi, G. J. Brown, J. Kwo, and M. Hong,  J. Vac. Technol. B30, 02B118 DOI: 10.1116/1.3678206 (2012).

34. “Ge metal-oxide-semiconductor devices with Al₂O₃/Ga₂O₃(Gd₂O₃) as gate dielectric”, L. K. Chu, T. H. Chiang, T. D. Lin, Y. J. Lee, R. L. Chu, J. Kwo, and M. Hong, Microelectronic Engineering 91, 89-92 DOI: 10.1016/j.mee.2011.10.013  (2012).

35. “Thickness-dependent lattice relaxation and the associated optical properties of ZnO epitaxial films grown on Si (111)”, W.-R. Liu, B. H. Lin, C. C. Kuo, W. C. Lee, M. Hong, J. Kwo, C.-H. Hsu, and W. F. Hsieh,  CrystEngComm 14 8103 (2012) DOI: 10.1039/c2ce26074c

36. “The influence of dislocations on optical and electrical properties of epitaxial ZnO on Si (111) using a g-Al₂O₃ buffer layer”, W.-R. Liu, B. H. Lin, S. Yang, C. C. Kuo, Y.-H. Li, C.-H. Hsu, W. F. Hsieh, W. C. Lee, M. Hong, and J. Kwo, CrystEngComm 14 1665 DOI: 10.1039/c2ce06218f (2012).

37. “Atomic-scale determination of band offsets at the Gd₂O₃/GaAs (100) hetero-interface using scanning tunneling spectroscopy”,  Y. P. Chiu, B. C. Huang _, M. C. Shih, J. Y. Shen, P. Chang, C. S. Chang, M. L. Huang, M. -H. Tsai, M. Hong, and J. Kwo, Appl. Phys. Lett. 99, 212101 (2011).

38. “Self-aligned inversion-channel In_0.53Ga_0.47As metal-oxide-semiconductor field-effect transistors with in-situ deposited Al₂O₃/Y₂O₃ as gate dielectrics”, P. Chang, H.-C. Chiu, T.-D. Lin, M.-L. Huang, W. H. Chang, S.-Y. Wu, K.-H. Wu, M. Hong, and J.  Kwo, Appl. Phys. Express 4 114202 (2011).

39. “Achieving a low interfacial density of states with a flat distribution in high k Ga₂O₃(Gd₂O₃) directly deposited on Ge”, C. A. Lin, H. C. Lin, T. H. Chiang, R. L. Chu, L. K. Chu, T. D. Lin, Y. C. Chang, W.-E Wang, J. Kwo, and M. Hong, Appl. Phys. Express 4 111101 (2011).

40. “Defect density reduction of the Al₂O₃/GaAs(001) interface by using H₂S molecular beam passivation”, C. Merckling, Y.C. Chang, C.Y. Lu, J. Penaud, G. Brammertz, M. Scarrozza, G. Pourtois, J. Kwo, M. Hong, J. Dekoster, M. Meuris, M. Heyns, and M. Caymax, Surface Science 605, Issues 19-20, 1778-1783 (2011).  

41. “Low interfacial trap density and sub-nm equivalent oxide thickness in In_0.53Ga_0.47As (001) metal-oxide-semiconductor devices using molecular beam deposited HfO₂/Al₂O₃ as gate dielectrics”, L. K. Chu, C. Merckling, A. Alian, J. Dekoster, J. Kwo, M. Hong, M. Caymax, and M. Heyns, Appl. Phys. Lett. 99, 042908 (2011).

42. “The Growth of an Epitaxial ZnO Film on Si(111) with a Gd₂O₃(Ga₂O₃) Buffer Layer”, B. H. Lin, W. R. Liu, S. Yang, C. C. Kuo, C.-H. Hsu, W. F. Hsieh, W. C. Lee, Y. J. Lee, M. Hong, and J. Kwo, Cryst. Growth Des. 11, 2846–2851 (2011).

43. “Direct measurement of interfacial structure in epitaxial Gd₂O₃ on GaAs (100) using scanning tunneling microscopy”, Y. P. Chiu, M. C. Shih, B. C. Huang, J. Y. Shen, M. L. Huang, W. C. Lee, P. Chang, T. H. Chiang, M. Hong, and J. Kwo , Microelectronic Engineering 88, 1058-1060 (2011).

44. “In-situ atomic layer deposition and synchrotron-radiation photoemission study of Al₂O₃ on pristine n-GaAs (001)-4×6 surface”, Y.H. Chang, M.L. Huang, P. Chang, J.Y. Shen, B.R. Chen, C.L. Hsu, T.W. Pi, M. Hong, J. Kwo, Microelectronic Engineering 88, 1101-1104 (2011).

45. “Atomic-layer-deposited Al₂O₃ and HfO₂ on GaN: a comparative study on interfaces and electrical characteristics”, Y.C. Chang, M.L. Huang, Y.H. Chang, Y.J. Lee, H.C. Chiu, J. Kwo, M. Hong,  Microelectronic Engineering 88, 1207-1210 (2011).

46. “Epitaxial stabilization of a monoclinic phase in Y₂O₃ films on c-plane GaN”, W.H. Chang, P. Chang, W.C. Lee, T.Y. Lai, J. Kwo, C.-H. Hsu, J.M. Hong, and M. Hong, J. Crystal Growth 323 107-110 (2011).

47. “Strong crystal anisotropy of magneto-transport property in Fe₃Si epitaxial film”, H.Y. Hung, S.Y. Huang, P. Chang, W.C. Lin, Y.C. Liu, S.F. Lee, M. Hong, J. Kwo,  J. Crystal Growth 323 372-375 (2011).

48. “MBE - enabling technology beyond Si CMOS”, (invited talk) P. Chang, W. C. Lee, T. D. Lin, C. H. Hsu, J. Kwo, and M. Hong, J. Crystal Growth 323 511-517 (2011).    

49. “Achieving very high drain current of 1.23 mA/μm in a 1μm-gate-length self-aligned inversion-channel MBE-Al₂O₃/Ga₂O₃(Gd₂O₃)/In_0.75Ga_0.25As MOSFET”, T.D. Lin, P. Chang, Y.D. Wu, H.C. Chiu, J. Kwo, and M. Hong, J. Crystal Growth 323, 518-521 (2011).

50. “Low Interfacial Density of States around Mid-gap in MBE-Ga₂O₃(Gd₂O₃)/In_0.2Ga_0.8As”, C. A. Lin, H. C. Chiu, T. H. Chiang, Y. C. Chang, T. D. Lin, J. Kwo, W. E Wang, J. Dekoster, M. Heyns, and M. Hong, J. Crystal Growth 323 99-102 (2011).

51. “Self-aligned inversion-channel In_0.2Ga_0.8As metal-oxide-semiconductor field-effect transistor with molecular beam epitaxy Al₂O₃/Ga₂O₃(Gd₂O₃) as the gate dielectric”, W. H. Chang, T. H. Chiang, Y. D. Wu, M. Hong, C. A. Lin, and J. Kwo, J. Vac. Sci. Technol. B: Microelectronics and Nanometer Structures 29(3), 03C122- 03C122-4 (2011).   

52. “Direct determination of flat-band voltage for metal/high k oxide/semiconductor heterointerfaces by electric-field-induced second-harmonic generation”, C.-L. Chang, W. C. Lee, L. K. Chu, M. Hong, J. Kwo, and Y.-M. Chang, Appl. Phys. Lett. 98, 171902 (2011).

53. “Magnetization reversal processes of epitaxial Fe₃Si films on GaAs(001)”,  Y. C. Liu, P. Chang, S. Y. Huang, L. J. Chang, W. C. Lin, S. F. Lee, M. Hong, and J. Kwo, Journal of Applied Physics 109(7), 07D508 - 07D508-3 (2011). 

54. “InGaAs and Ge MOSFETs with high k dielectrics” (invited talk), W.C. Lee, P. Chang, T.D. Lin, L.K. Chu, H.C. Chiu, J. Kwo, and M. Hong, Microelectronic Engineering 88, 336 - 341 (2011).

55. “H₂S Molecular Beam Passivation of Ge(001)”,  C. Merckling, Y.C. Chang, C.Y. Lu, J. Penaud, M. El-Kazzi, F. Bellenger, G. Brammertz, M. Hong, J. Kwo, M. Meuris, J. Dekoster, M.M. Heyns, and M. Caymax, Microelectronic Engineering 88, 399 - 402 (2011).

56. “Electrical properties and interfacial chemical environments of in-situ atomic layer deposited Al₂O₃ on freshly molecular beam epitaxy grown GaAs” Y. H. Chang, M. L. Huang, P. Chang, C. A. Lin, Y. J. Chu, B. R. Chen, C. L. Hsu, J. Kwo, T. W. Pi, and M. Hong, Microelectronic Engineering 88, 440–443 (2011).

57. “Electronic structures of Ga₂O₃(Gd₂O₃) gate dielectric on n-Ge(001) as grown and after CF₄ plasma treatment: A synchrotron-radiation photoemission study”, T.-W. Pi (皮敦文), W. C. Lee (李威縉), M. L. Huang (黃懋霖), L. K. Chu (朱龍琨), T. D. Lin (林宗達), T. H. Chiang (江宗鴻), Y. C. Wang (王貽樟), Y. D. Wu (吳彥達), M. Hong (洪銘輝), and J. Kwo (郭瑞年), J. Appl. Phys.109, 063725 (2011).

58. “Attainment of low interfacial trap density absent of a large midgap peak in In_0.2Ga_0.8As by Ga₂O₃(Gd₂O₃) Passivation”, C. A. Lin, H. C. Chiu, T. H. Chiang, T. D. Lin, Y. H. Chang, W. H. Chang, Y. C. Chang, W.–E. Wang, J. Dekoster, T. Y. Hoffmann, M. Hong, and J. Kwo, Appl. Phys. Lett. 98, 062108 (2011).

59. “High-resolution core-level photoemission study of CF₄-treated Gd₂O₃(Ga₂O₃) gate dielectric on Ge probed by synchrotron radiation”, T.-W. Pi (皮敦文), M. L. Huang (黃懋霖), W. C. Lee (李威縉), L. K. Chu (朱龍琨), T. D. Lin (林宗達), T. H. Chiang (江宗鴻), Y. C. Wang (王貽樟), Y. D. Wu (吳彥達), M. Hong (洪銘輝), and J. Kwo (郭瑞年), Appl. Phys. Lett. 98, 062903 (2011).

60. “Thermal Annealing and Grain Boundary Effects on Ferromagnetism in Y₂O₃:Co Diluted Magnetic Oxide Nanocrystals”, Y. L. Soo, T. S. Wu , C. S. Wang, S. L. Chang, H. Y. Lee, P. P. Chu, C. Y. Chen, L. J. Chou, T. S. Chan, C. A. Hsieh, J. F. Lee, J. Kwo, and M. Hong, Appl. Phys. Lett. 98, 031906 (2011).

61. “Structural characteristics of nano-meter thick Gd₂O₃ epi-films grown on GaN (0001)”, W. H. Chang, P. Chang, T. Y. Lai, Y. J. Lee, J. Kwo, C. H. Hsu, and M. Hong, Crystal Growth & Design 10(12), 5117-5122 (2010).

62. “Drain current enhancement and negligible current collapse in GaN MOSFETs with atomic-layer-deposited HfO₂ as a gate dielectric”, Y. C. Chang, W. H. Chang, Y. H. Chang, J. Kwo, Y. S. Lin, S. H. Hsu, J. M. Hong, C. C. Tsai, and M. Hong, Microelectronic Engineering 87(11) 2042 (2010).

63. “Effective Reduction of Interfacial Traps in Al₂O₃/GaAs (001) Gate Stacks Using Surface Engineering and Thermal Annealing”, Y. C. Chang, C. Merckling, J. Penaud, C. Y. Lu, W. E. Wang, J. Dekoster, M. Meuris, M. Caymax, M. Heyns, J. Kwo, and M. Hong,  Appl. Phys. Lett. 97, 112901 (2010).

64. “Self-aligned inversion-channel In_0.75Ga_0.25As metal-oxide-semiconductor field-effect-transistors using UHV-Al₂O₃/Ga₂O₃(Gd₂O₃) and ALD-Al₂O₃ as gate dielectrics”, T.D. Lin, H.C. Chiu, P. Chang, Y.H. Chang, Y.D. Wu, M. Hong, and J. Kwo, Solid State Electronics 54, 919-924 (2010).

65. “Effective passivation and high-performance metal-oxide-semiconductor devices using ultra-high-vacuum deposited high-k dielectrics on Ge without interfacial layers”, L.K. Chu, R.L. Chu, T.D. Lin, W.C. Lee, C.A. Lin, M.L. Huang,  Y.J. Lee, J. Kwo, and M. Hong, Solid State Electronics 54, 965-971 (2010).

66. “Passivation of InGaAs using in situ molecular beam epitaxy Al₂O₃/HfO₂ and HfAlO/HfO₂”,  P. Chang, W. C. Lee, M. L. Huang, Y. J. Lee, M. Hong, and J. Kwo, J. Vac. Sci. Technol. B 28(3), C3A9 (2010).

67. “High-quality molecular-beam-epitaxy-grown Ga₂O₃(Gd₂O₃) on Ge (100): Electrical and chemical characterizations”, R. L. Chu, T. D. Lin, L. K. Chu, M. L. Huang, C. C. Chang, M. Hong, C. A. Lin, and J. Kwo, J. Vac. Sci. Technol. B 28(3), C3A1 (2010).

68.  “Lattice strain and in situ chemical depth profiling of nanometer-thick molecular beam epitaxy grown Y₂O₃ epitaxial films on Si (111)”, Y. J. Lee, W. C. Lee, M. L. Huang, S. Y. Wu, C. W. Nieh, M. Hong, J. Kwo, and C.-H. Hsu, J. Vac. Sci. Technol. B 28(3), C3A17 (2010).

69. “dc and rf characteristics of self-aligned inversion-channel In_0.53Ga_0.47As metal-oxide-semiconductor field-effect transistors using molecular beam epitaxy-Al₂O₃/Ga₂O₃(Gd₂O₃) as gate dielectrics”, T. D. Lin, P. Chang, H. C. Chiu, M. Hong, J. Kwo, Y. S. Lin, and Shawn S. H. Hsu, J. Vac. Sci. Technol. B 28(3), C3H14 (2010).

70. “Engineering of threshold voltages in molecular beam epitaxy-grown Al₂O₃/Ga₂O₃(Gd₂O₃)/In_0.2Ga_0.8As”, Y. D. Wu, T. D. Lin, T. H. Chiang, Y. C. Chang, H. C. Chiu, Y. J. Lee, M. Hong, C. A. Lin and J. Kwo,  J. Vac. Sci. Technol. B 28(3), C3H10 (2010).

71. “InGaAs, Ge, and GaN Metal-Oxide-Semiconductor Devices with High k Dielectrics for Science and Technology beyond Si CMOS”, M. Hong, J. Kwo, T. D. Lin, M. L. Huang, W. C. Lee, and P. Chang, Springer book chapter.

72. “Al₂O₃/Ga₂O₃(Gd₂O₃) passivation on In_0.20Ga_0.80As/GaAs – structural intactness of high-temperature annealing”, Y. J. Lee, C. H. Lee, L. T. Tung, T. H. Chiang, T. Y. Lai, J. Kwo, C.-H. Hsu, and M. Hong, Journal of Physics D: Applied Physics, 43 (2010) 135101.

73. “Nanometer-thick single-crystal hexagonal Gd₂O₃ on GaN for advanced complementary metal-oxide-semiconductor technology”, W. H. Chang, C. H. Lee, Y. C. Chang, P. Chang, M. L. Huang, Y. J. Lee, C. H. Hsu, J. M. Hong, C. C. Tsai, J. R. Kwo, and M. Hong, Advanced Materials 21 4970–4974 (2009).

74. “Surface Exciton Polariton in HfO₂: Electron Energy-Loss Spectroscopy Study”, S.-C. Liou, M.-W. Chu, Y.-J. Lee, M. Hong, J. Kwo, and C. H. Chen, New Journal of Physics 11 103009 (2009).

75. “InGaAs Metal Oxide Semiconductor Devices with Ga₂O₃(Gd₂O₃) High-k Dielectrics for Science and Technology beyond Si Complementary Metal Oxide Semiconductors “, M. Hong, J. Kwo, T. D. Lin, and M. L. Huang, MRS Bulletin 34, 514 July 2009.

76. “Ga₂O₃(Gd₂O₃) on Ge without interfacial layers: energy-band parameters and metal oxide semiconductor devices”, L. K. Chu, T. D. Lin, M. L. Huang, R. L. Chu, C. C. Chang, J. Kwo, and M. Hong, Appl. Phys. Lett.  94, 202108 (2009).  This paper has been selected for the June 1, 2009 issue of Virtual Journal of Nanoscale Science & Technology. The Virtual Journal, which is published by the American Institute of Physics and the American Physical Society in cooperation with numerous other societies and publishers, is an edited compilation of links to articles from participating publishers, covering a focused area of frontier research.

77. “Research Advances on III-V MOSFET Electronics Beyond Si CMOS”, J. Kwo and M. Hong, J. Crystal Growth 311, 1944-1949 (2009). Presented at (15^th International Conference on Molecular Beam Epitaxy (MBE2008), August 4-8, 2008)

78. “Depletion-mode In_0.2Ga_0.8As/GaAs MOSFET with molecular beam epitaxy grown Al₂O₃/Ga₂O₃(Gd₂O₃) as gate dielectrics”, C. A. Lin, T. D. Lin, T. H. Chiang, H. C. Chiu, P. Chang, M. Hong, and J. Kwo, J. Crystal Growth 311, 1954–1957 (2009). Presented at (15^th International Conference on Molecular Beam Epitaxy (MBE2008), August 4-8, 2008)

79. “Inversion-channel enhancement mode GaAs MOSFETs with regrown source and drain contacts”, C. C. Liao, D. Cheng, C. C. Cheng, K. Y. Cheng, M. Feng, T. H. Chiang, J. Kwo, and M. Hong, J. Crystal Growth 311, 1958–1961 (2009).  Presented at (15^th International Conference on Molecular Beam Epitaxy (MBE2008), August 4-8, 2008)

80. “GaN on Si with nm-thick single crystal Sc₂O₃ as a template using molecular beam epitaxy”, W. C. Lee, Y. J. Lee, J. Kwo, C. H. Hsu, C. H. Lee, S. Y. Wu, H. M. Ng, and M. Hong, J. Crystal Growth 311, 2006-2009 (2009). Presented at (15^th International Conference on Molecular Beam Epitaxy (MBE2008), August 4-8, 2008)

81. “GaN metal-oxide-semiconductor diodes with molecular beam epitaxy-Al₂O₃ as a template followed by atomic layer deposition growth”, Y. H. Chang, H. C. Chiu, W. H. Chang, J. Kwo, C. C. Tsai, J. M. Hong, and M. Hong, J. Crystal Growth 311, 2084-2086 ( 2009). Presented at (15^th International Conference on Molecular Beam Epitaxy (MBE2008), August 4-8, 2008)

82. “High k dielectric single-crystal monoclinic Gd₂O₃ on GaN with excellent thermal, structural, and electrical properties”, W. H. Chang, C. H. Lee, P. Chang, Y. C. Chang, Y. J. Lee, J. Kwo, C. C. Tsai, J. M. Hong, C.-H. Hsu, and M. Hong, J. Crystal Growth 311, 2183–2186 (2009). Presented at (15^th International Conference on Molecular Beam Epitaxy (MBE2008), August 4-8, 2008)

83. “Molecular Beam Epitaxy-Grown Al₂O₃/HfO₂ High-κ Dielectrics for Germanium”, W. C. Lee, B. H. Chin, L. K. Chu, T. D. Lin, Y. J. Lee, L. T. Tung, C. H. Lee, M. Hong, and J. Kwo, J. Crystal Growth 311, 2187-2190 (2009). Presented at (15^th International Conference on Molecular Beam Epitaxy (MBE2008), August 4-8, 2008)

84. “Metal-oxide-semiconductor devices with molecular beam epitaxy-grown Y₂O₃ on Ge”, L. K. Chu, W. C. Lee, M. L. Huang, Y. H. Chang, L. T. Tung, C. C. Chang, Y. J. Lee, J. Kwo, and M. Hong, J. Crystal Growth  311, 2195–2198 (2009). Presented at (15^th International Conference on Molecular Beam Epitaxy (MBE2008), August 4-8, 2008)

85. “Energy-band parameters of atomic-layer-deposited Al₂O₃ and HfO₂ on In_xGa_1-xAs”, M. L. Huang, Y. C. Chang, Y. H. Chang, T. D. Lin, J. Kwo, and M. Hong, Appl. Phys. Lett. 94, 052106 (2009).  

86. “Domain Matching Epitaxial Growth of High-Quality ZnO Film Using a Y₂O₃ Buffer Layer on Si (111)”, W.-R. Liu, Y.-H. Li, W. F. Hsieh, C.-H. Hsu, W. C. Lee, Y. J. Lee, M. Hong, and J. Kwo, Cryst. Growth Des., 9 (1), 239-242 (2009).

87. “Achieving low interfacial trap density in atomic layer deposited Al₂O₃ on In_0.53Ga_0.47As”, H. C. Chiu, L. T. Tung, Y. H. Chang, Y. J. Lee, C. C. Chang, J. Kwo, and M. Hong, Appl. Phys. Lett. 93, 202903 (2008).

88. “Self-aligned inversion n-channel In_0.2Ga_0.8As/GaAs metal-oxide-semiconductor field-effect-transistors with TiN gate and Ga₂O₃(Gd₂O₃) dielectric”, C. P. Chen, T. D. Lin, Y. J. Lee, Y. C. Chang, M. Hong, and J. Kwo, Solid-State Electronics 52, 1615 (2008). Presented at the 2007 ISDRS Univ. Maryland.

89. “Inversion-channel GaN metal-oxide-semiconductor field-effect transistor with atomic-layer- deposited Al₂O₃ as gate dielectric”, Y. C. Chang, W. H. Chang, H. C. Chiu, L. T. Tung, C. H. Lee, K. H. Shiu, M. Hong, J. Kwo, J. M. Hong, and C. C. Tsai, Appl. Phys. Lett. 93, 053504 (2008).

90. “High-performance self-aligned inversion-channel In_0.53Ga_0.47As metal-oxide-semiconductor field-effect-transistor”, T. D. Lin, H. C. Chiu, P. Chang, L. T. Tung, C. P. Chen, M. Hong, J. Kwo, W. Tsai, and Y. C. Wang, Appl. Phys. Lett. 93, 033516 (2008).

91. “Achieving 1 nm capacitive effective thickness in atomic layer deposited HfO₂ on In_0.53Ga_0.47As”, K. Y. Lee, Y. J. Lee, P. Chang, M. L. Huang, Y. C. Chang, M. Hong, and J. Kwo, Appl. Phys. Lett. 92, 252908 (2008).  

92. "Si metal-oxide-semiconductor devices with high κ dielectrics fabricated using a novel MBE template approach followed by atomic layer deposition" C. H. Pan, J. Kwo, K. Y. Lee, W. C. Lee, L. K. Chu, M. L. Huang, Y. J. Lee, and M. Hong, J. Vac. Sci. Technol. B 26, 1178 (2008).  25^th North American Molecular Beam Epitaxy Conference, Albuquerque, New Mexico/USA, September 23-26, 2007.

93. "Oxide scalability in Al₂O₃/Ga₂O₃(Gd₂O₃)/In_0.20Ga_0.80As/GaAs heterostructures" K. H. Shiu, C. H. Chiang, Y. J. Lee, W. C. Lee, P. Chang, L. T. Tung, M. Hong, J. Kwo, and W. Tsai, J. Vac. Sci. Technol. B 26, 1132 (2008). 25^th North American Molecular Beam Epitaxy Conference, Albuquerque, New Mexico/USA, September 23-26, 2007.

94. "Molecular beam epitaxy grown Ga₂O₃(Gd₂O₃) high kappa dielectrics for germanium passivation-x-ray photoelectron spectroscopy and electrical characteristics", C. H. Lee, T. D. Lin, L. T. Tung, M. L. Huang, M. Hong, and J. Kwo, J. Vac. Sci. Technol. B 26, 1128 (2008).  25^th North American Molecular Beam Epitaxy Conference, Albuquerque, New Mexico/USA, September 23-26, 2007.

95. "High-quality nanothick single crystal Y₂O₃ films epitaxially grown on Si (111): growth and structural characteristics " Y. J. Lee, W. C. Lee, C. W. Nieh, Z. K. Yang, A. R. Kortan, M. Hong, J. Kwo, and C.-H. Hsu, J. Vac. Sci. Technol. B 26, 1124 (2008). 25^th North American Molecular Beam Epitaxy Conference, Albuquerque, New Mexico/USA, September 23-26, 2007.

96. "Growth and Structural Characteristics of GaN/AlN/nano thick g-Al₂O₃/Si (111)", W. C. Lee, Y. J. Lee, L. T. Tung, S. Y. Wu, C. H. Lee, M. Hong, H. M. Ng, J. Kwo, and C. H. Hsu, J. Vac. Sci. Technol. B 26, 1064 (2008).  25^th North American Molecular Beam Epitaxy Conference, Albuquerque, New Mexico/USA, September 23-26, 2007.

97. “Transmission Electron Microscopy Characterization of HfO₂/GaAs(001) Heterostructures Grown by Molecular Beam Epitaxy”, S. C. Liou, M.-W. Chu, C. H. Chen, Y. J. Lee, P. Chang, W. C. Lee, M. Hong, and J. Kwo, Applied Phys. A-MATERIALS SCIENCE & PROCESSING, 91 585 (2008). DOI: 10.1007/s00339-008-4493-3.

98. “1 nm equivalent oxide thickness in Ga₂O₃(Gd₂O₃)/In_0.2Ga_0.8As metal-oxide-semiconductor capacitors”, K. H. Shiu, T. H. Chiang, P. Chang, L. T. Tung, M. Hong, J. Kwo, and W. Tsai, Appl. Phys. Lett. 92, 172904 (2008).

99. “Correlation between crystal structure and photoluminescence for epitaxial ZnO on Si (111) using a γ-Al₂O₃ buffer layer”, W. R. Liu, Y. H. Li, W. F. Hsieh, C. H. Hsu, W. C. Lee, M. Hong, and J. Kwo, J. Phys. D: Appl. Phys. 41, 065105 (2008).

100. “Atomic-layer-deposited HfO₂ on In_0.53Ga_0.47As: passivation and energy-band parameters”, Y. C. Chang, M. L. Huang, K. Y. Lee, Y. J. Lee, T. D. Lin, M. Hong, J. Kwo, T. S. Lay, C. C. Liao, and K. Y. Cheng, Appl. Phys. Lett, 92, 072901 (2008).

101. “Nanometer thick single crystal Y₂O₃ films epitaxially grown on Si (111) with structures approaching perfection”, C. W. Nieh, Y. J. Lee, W. C. Lee, Z. K. Yang, A. R. Kortan, M. Hong, J. Kwo, and C. H. Hsu, Appl. Phys. Lett, 92, 061914 (2008).

102. “Time Dependent Preferential Sputtering in the HfO₂ layer on Si (100)”, S. J. Chang, W. C. Lee, J. Hwang, M. Hong, and J. Kwo, Thin Solid Films 516, 948 - 952 (2008).

103. “Inelastic Electron Tunneling Spectroscopy Study of Metal-oxide-semiconductor Diodes Based on High-κ Gate Dielectrics”, S. L. You, C. C. Huang, C. J. Wang, H. C. Ho, J. Kwo, and W. C. Lee, K. Y. Lee, Y. D. Wu, Y. J. Lee, and M. Hong, Appl. Phys. Lett, 92, 012113, (2008).

104.  “Ga₂O₃(Gd₂O₃)/Si₃N₄ Dual -Layer Gate Dielectric for InGaAs Enhancement Mode MOSFET with Channel Inversion”, J.-F. Zheng, W. Tsai, T. D. Lin, Y. J. Lee, C. P. Chen, M. Hong, J. Kwo, S. Cui, and T. P. Ma, Appl. Phys. Lett. 91, 223502 (2007).

105. “Structural and compositional investigation of yttrium-doped HfO₂ films epitaxially grown on Si (111)”, Z. K. Yang, W. C. Lee, Y. J. Lee, P. Chang, M. L. Huang_, M. Hong, K. L. Yu, M.-T. Tang, B. H. Lin, C.-H. Hsu, and J. Kwo, Appl. Phys. Lett. 91, 202909 (2007).

106. “Advance in next century nano CMOSFET research and its future prospects for industry”, H. L. Hwang, Y. K. Chiou, C. H. Chang, C. C. Wang, K. Y. Lee, T. B. Wu, R. Kwo, M. Hong, K. S. Chang-Liao, C. Y. Lu, C. C. Lu, F. C. Chiu, C. H. Chen, J. Y. M. Lee, and A. Chin, Applied Surface Science 254 (1): 236-241 Sp. Iss. SI OCT 31 (2007).

107. “Local environment surrounding Co in MBE-grown Co-doped HfO₂ thin films probed by EXAFS”, Y. L. Soo, S. C. Weng, W. H. Sun, S. L. Chang, W. C. Lee, Y. S. Chang, J. Kwo, M. Hong, J. M. Ablett, C.-C. Kao, D. G. Liu, and J. F. Lee, Physical Review B 76, 132404, (2007).

108.  “Observation of room temperature ferromagnetic behavior in cluster free, Co doped HfO₂ films”, Y. H. Chang, Y. L. Soo, W. C. Lee, M. L. Huang, Y. J. Lee, S. C. Weng, W. H. Sun, M. Hong, J. Kwo, S. F. Lee, J. M. Ablett, and C-. C. Kao, Applied Physics Letters 91, 082504 (2007).

109. “Structural and electrical characteristics of atomic layer deposited high k HfO₂ on GaN”, Y. C. Chang, H. C. Chiu, Y. J. Lee, M. L. Huang, K. Y. Lee, M. Hong, Y. N. Chiu, J. Kwo, and Y. H. Wang, Applied Physics Letters 90, 232904 (2007).

110. “Defining new frontiers in electronic devices with high k dielectrics and interfacial engineering”, M. Hong, W. C. Lee, M. L. Huang, Y. C. Chang, T. D. Lin, Y. J. Lee, J. Kwo, C. H. Hsu and H. Y. Lee, Thin Solid Films 515,  5581-5586, (2007). (Invited paper, Intl 9sxns, 2006).

111. “Determination of three-dimensional interfacial strain - A novel method of probing interface structure with x-ray Bragg-surface diffraction”, W. C. Sun, C. H. Chu, H. C. Chang, B. K. Wu, Y. R. Chen, C. W. Cheng, M. S. Chiu, Y. C. Shen, H. H. Wu, Y. S. Hung, S. L. Chang, M. H. Hong, M. T. Tang, Y. Stetsko,  Thin Solid Films 515 (14), 5716-5723 MAY 23, 2007

112.  “III-V MOSFET’s with High k Dielectrics”, M. W. Hong, J. R. Kwo, P. C. Tsai, Y. C. Chang, M. L. Huang, C. P. Chen, and T. D. Lin, Japanese Journal of Applied Physics, Part 1 46, Issue 5B, 3167-3180 (2007). (Invited talk IWDTF (Dielectric Thin Films for Future ULSI Devices) 2006 Kawasaki, Japan.)

113. “Cubic HfO₂ doped with Y₂O₃ epitaxial films on GaAs (001) of enhanced dielectric constant”, Z. K. Yang, W. C. Lee, Y. J. Lee, P. Chang, M. L. Huang_, M. Hong, C.-H. Hsu, and J. Kwo, Appl. Phys. Lett. 90, 152908 (2007).  (The paper has also been selected for the April 23, 2007 issue of Virtual Journal of Nanoscale Science & Technology.)

114.  “A novel MBE template approach for ALD high k dielectrics growth”, K. Y. Lee, W. C. Lee, M. L. Huang^,, C. H. Chang, Y. J. Lee, T. B. Wu, M. Hong, and J. Kwo, J. Crystal Growth 301-302, 378, 2007. (14^th International Conference on Molecular Beam Epitaxy (MBE2006), September 3-8, 2006).

115. “MBE grown high-quality Gd₂O₃/Si (111) hetero-structure”, T. D. Lin, M. C. Hang, C. H. Hsu, J. Kwo, and M. Hong, J. Crystal Growth 301-302, 386-389, (2007). (14^th International Conference on Molecular Beam Epitaxy (MBE2006), September 3-8, 2006).

116. “MBE grown high κ dielectrics of Ga₂O₃(Gd₂O₃) for GaN”, Y. C. Chang, Y. J. Lee, Y. N. Chiu, T. D. Lin, S. Y. Wu, H. C. Chiu, J. Kwo, Y. H. Wang, and M. Hong, J. Crystal Growth 301-302, 390-393 (2007). 14^th International Conference on Molecular Beam Epitaxy (MBE2006), September 3-8, 2006.

117. “Structural and Magnetic properties of Epitaxial Fe₃Si/GaAs Heterostructures”, Y. L. Hsu, Y. J. Lee, Y. H. Chang, M. L. Huang, Y. N. Chiu, C. C. Ho, P. Chang, C. H. Hsu, M. Hong, and J. Kwo, J. Crystal Growth 301-302, 588, 2007. (14^th International Conference on Molecular Beam Epitaxy (MBE2006), September 3-8, 2006). 

118. “Interfacial trap characteristics in depletion mode GaAs MOSFET’s”, T. C. Lee, C. Y. Chan, P. J. Tsai, Shawn S. H. Hsu, J. Kwo, and M. Hong, J. Crystal Growth 301-302, 1009-1012, (2007). (14^th International Conference on Molecular Beam Epitaxy (MBE2006), September 3-8, 2006).

119. “Depletion mode GaAs-based MOSFET with Ga₂O₃(Gd₂O₃) as a gate dielectric”, P. J. Tsai, L. K. Chu, Y. W. Chen, Y. N. Chiu, H. P. Yang, P. Chang, J. Kwo, J. Chi, and M. Hong, J. Crystal Growth 301-302, 1013-1016, (2007). (14^th International Conf. on Molecular Beam Epitaxy (MBE2006), September 3-8, 2006).

120.  “Effect of Al Incorporation in the Thermal Stability of Atomic-Layer-Deposited HfO₂ for Gate Dielectric Applications”, Yan-Kai Chiou, Che-Hao Chang, Chen-Chan Wang, Kun-Yu Lee, Tai-Bor Wu, Raynien Kwo, and Minghwei Hong, Journal of The Electrochemical Society, 154 (4) G99-G102, 2007.

121. “Interfacial self-cleaning in atomic layer deposition of HfO₂ gate dielectric on In_0.15Ga_0.85As”, C.-H. Chang, Y.-K. Chiou, Y.-C. Chang, K.-Y. Lee, T.-D. Lin, T.-B. Wu, M. Hong, and J. Kwo, Appl. Phys. Lett. 89, 242911, 2006.

122. “Molecular beam epitaxy grown template for subsequent atomic layer deposition of high k dielectrics”, K. Y. Lee, W. C. Lee, Y. J. Lee, M. L. Huang, C. H. Chang, T. B. Wu, M. Hong, and J. Kwo, Appl. Phys. Lett. 89, 222906, 2006.

123. “Structural and electrical studies of Ga₂O₃(Gd₂O₃)/GaAs under high temperature annealing”, C. P. Chen, Y. J. Lee, Y. C. Chang, Z. K. Yang, M. Hong, J. Kwo, H. Y. Lee, and T. S. Lay, J. Appl. Phys. 100, 104502 (2006).

124. “Structure of HfO₂ films epitaxially grown on GaAs (001)”, C. H. Hsu, P. Chang, W. C. Lee, Z. K. Yang, Y. J. Lee, M. Hong, J. Kwo, C. M. Huang, and H. Y. Lee, Appl. Phys. Lett. 89 (12), 122907, 2006.

125. “Measuring interface strains at the atomic resolution in depth using x-ray Bragg-surface diffraction”, W. C. Sun, H. C. Chang, B. K. Wu, Y. R. Chen, C. H. Chu, S. L. Chang, M. Hong, M. T. Tang, and Yu. P. Stetsko, Appl. Phys. Lett, 89, 091915, 2006.

126. “Energy-band parameters of atomic-layer-deposition-Al₂O₃/InGaAs heterostructures”, M. L. Huang, Y. C. Chang, C. H. Chang, T. D. Lin, J. Kwo, T. B. Wu, and M. Hong, Appl. Phys. Lett. 89, 012903, 2006.

127. “Structures of Sc₂O₃ films epitaxially grown on a-Al₂O₃ (0001)”, A. R. Kortan, M. Hong, J. Kwo, C. P. Chen, J. P. Mannaerts, S. H. Liou, and N. Kopylov, Appl. Phys. Lett. 88, 021906, 2006. 

128. “Probing interface Strain with x-ray Bragg-surface diffraction”, W.-C. Sun, H.-C. Chang, P.-K. Wu, Y.-R. Chen, C.-H. Chu, C.-W. Cheng, M.-S. Chiu, Y.-C. Shen, H.-H. Wu, W.-S. Sun, Y.-R. Lee, M. Hong, Yu. P. Stetsko, M.-T. Tang, and S.-L. Chang, Acta Crystallogr. A61, C410, 2005.

129. “High-Quality Nano-Thickness Single Crystal Sc₂O₃ film Grown on Si (111)”, M. Hong, A. R. Kortan, P. Chang, Y. L. Huang, C. P. Chen, H. Y. Chou, H. Y. Lee, J. R. Kwo, M. W. Chu, C. H. Chen, L. V. Goncharova, E. Garfunkel, and T. Gustafsson, Appl. Phys. Lett. 87, 251902, 2005.

130.  “Surface passivation of III-V compound semiconductors using atomic-layer-deposition grown Al₂O₃”, M. L. Huang, Y. C. Chang, C. H. Chang, Y. J. Lee, P. Chang, J. Kwo, T. B. Wu, and M. Hong, Appl. Phys. Lett. 87, 252104, 2005.

131.  “High-quality thin single crystal γ-Al₂O₃ films grown on Si (111)”, S. Y. Wu, M. Hong, A. R. Kortan, J. Kwo, J. P. Mannaerts, W. C. Lee, and Y. L. Huang, Appl. Phys. Lett. 87, 091908, 2005.

132. “Thermodynamic stability of Ga₂O₃ (Gd₂O₃)/GaAs interface”, Y. L. Huang, P. Chang, Z. K. Yang, Y. J. Lee, H. Y. Lee, H. J. Liu J. Kwo, J. P. Mannaerts, and M. Hong, Appl. Phys. Lett. 86, 191905, 2005.

133. “Depth-profiling the electronic structures at HfO₂/Si interface grown by molecular beam epitaxy”, T. S. Lay, S. C. Chang, G. J. Din, C. C. Yeh, W. H. Hung, W. C. Lee, J. Kwo and M. Hong, J. Vac. Sci. & Technol. 23(3), 1291-1293, May-Jun, 2005. (NAMBE 2004 – 22^nd North American MBE conference – Banff, Alberta, Canada October 11-13, 2004.)

134. “Depth-profile study of the electronic structures at Ga₂O₃(Gd₂O₃)- and Gd₂O₃-GaN interfaces by x-ray photoelectron spectroscopy”, T. S. Lay, Y. Y. Liao, W. H. Hung, M. Hong, and J. Kwo, Journal of Crystal Growth 278 624–628, 2005. (International Conference on MBE, August 23-27, 2004).

135. “MBE Grown High k Gate Dielectrics of HfO₂ and (Hf-Al)O₂ for Si and III-V Semiconductors Nano-electronics”, W. C. Lee, Y. J. Lee, Y. D. Wu, P. Chang, Y. L. Huang, Y. L. Hsu, J. P. Mannaerts, R. L. Lo, F. R. Chen, S. Maikap, L. S. Lee, W. Y. Hsieh, M. J. Tsai, S. Y. Lin, T. Gustffson, M. Hong, and J. Kwo, Journal of Crystal Growth 278, 619–623, 2005 (International Conference on MBE, August 23-27, 2004).

136. “Thin single crystal Sc₂O₃ films epitaxially grown on Si (111)”, C. P. Chen, M. Hong, J. Kwo, H. M. Cheng, Y. L. Huang, S. Y. Lin, J. Chi, H. Y. Lee, Y. F. Hsieh, and J. P. Mannaerts, Journal of Crystal Growth 278, 638–642, 2005 (International Conference on MBE, August 23-27, 2004).

137. “GaAs-based metal-oxide-semiconductor field-effect-transistors with Al₂O₃ gate dielectrics grown by atomic layer deposition”, P. D. Ye, G. D. Wilk, B. Yang, J. Kwo, H. J. L. Gossmann, M. Frei, J. P. Mannaerts, M. Sergent, M. Hong, K. K. Ng, and J. Bude, J. Electron. Mater. 33, 912, 2004.

138. “Depletion-mode InGaAs metal-oxide-semiconductor field-effect-transistor with oxide gate dielectric grown by atomic-layer deposition”, P. D. Ye, G. D. Wilk, B. Yang, J. Kwo, H.-J. L. Gossmann, M. Hong, K. K. Ng, and J. Bude, Appl. Phys. Lett. 84, 434, 2004.

139. “GaAs metal-oxide-semiconductor field-effect-transistor with nanometerthin dielectric grown by atomic layer deposition”, P. D. Ye, G. D. Wilk, B. Yang, J. Kwo, S. N. G. Chu, S. Nakahara, H.-J. L. Gossmann, J. P. Mannaerts, M. Hong, K. K. Ng, and J. Bude, Appl. Phys. Lett. 83, 180, 2003.

140. “Schottky Barrier Height and Interfacial State Density on Oxide-GaAs Interface”, J. S. Hwang, M. F. Chen, C. C. Chang, M. F. Chen, C. C. Chen, K. I. Lin, F. C. Tang, M. Hong, and J. Kwo, J. Appl. Phys. 94 (1), pp. 348-353, 2003. 

141.  “Rapid post-metallization annealing effects on high-k Y₂O₃/Si capacitor”, T. S. Lay , Y. Y. Liao, W. D. Liu, Y. H. Lai, W. H. Hung, J. Kwo, M. Hong, J. P. Mannaerts , Solid State Electronics 47(2), 1021-1025 June 2003.

142. “GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition”, P. D. Ye, G. D. Wilk, J. Kwo, B. Yang, H.-J.L. Gossmann, M. R. Frei, S. N. G. Chu, J. P. Mannaerts, M. Sergent, M. Hong, K. Ng, and J. Bude, IEEE Electron Device Letters v. 24, 4, p. 209,  2003. 

143. “Optimization of AuGe/Ni/Au ohmic contacts for GaAs MOSFETs”, H. C. Lin, S. Senanayake, and K. Y. Cheng, M. Hong, J. Kwo, B. Yang, and J. P. Mannaerts, IEEE Trans. Electron Dev., vol. 50, no. 4, pp. 880-885, 2003. 

144. “Advances in High k Gate Dielectrics for Si and III-V Semiconductors”, J. Kwo, M. Hong, B. Busch, D. A. Muller, Y. J. Chabal, A. R. Kortan, J. P. Mannaerts, B. Yang, P. Ye, H. Gossmann, A. M. Sergent, K. K. Ng, J. Bude, W. H. Schulte, E. Garfunkel, and T. Gustafsson, J. Crystal Growth, 251, 645, 2003. 

145. “Impact of metal/oxide interface to DC and RF performance of D-mode GaAs MOSFET employing MBE grown Ga₂O₃(Gd₂O₃) as gate dielectric”, B. Yang, P. Ye, J. Kwo, M. Frei, H. Gossmann, J. P. Mannaerts, M. Sergent, M. Hong, K. K. Ng, and J. Bude, J. Crystal Growth, 251, 837, 2003. 

146. “Electrical characteristics of ultrathin Pt/Y₂O₃/Si capacitor with rapid post-metallisation annealing”, T. S. Lay, W. D. Liu, J. Kwo, M. Hong, and J. P. Mannaerts, IEE Electronics Letters 38, No. 24, pp. 1594-1596, 21^st November, 2002. 

147. “Direct atomic structure determination of epitaxially grown films: Gd₂O₃ on GaAs(100)”, M. Sowwan, Y. Yacoby, J. Pitney, R. MacHarrie, M. Hong, J. Cross, D. A. Walko, R. Clarke, R. Pindak, and E. A. Stern, Phys. Rev. B 66, 205311, 2002 (12 pages).

148. “Structure of Gd₂O₃ films epitaxially grown on GaAs (100) and GaN (0001) surfaces”, T. Fluckiger, M. Erbudak, A. Hensch, Y. Weisskopf, M. Hong, and A. R. Kortan, Surface and Interface Analysis, 34, pp. 441-444, 2002. 

149. “Optical properties of gallium oxide thin films”, M. Rebien, W. Henrion, M. Hong, J. P. Mannaerts, and M. Fleischer, Appl. Phys. Lett. 81, 250, 2002. 

150. “Single crystal GaN/Gd₂O₃/GaN heterostructure”, M. Hong, J. Kwo, S. N. G. Chu, J. P. Mannaerts, A. R. Kortan, H. M. Ng, A. Y. Cho, K. A. Anselm, C. M. Lee and J. I. Chyi, J. Vac. Sci. Technol. B 20(3), 1274, 2002 (presented at the 20^th NA MBE October 1-3, 2001).

151. “Interface reactions of high- k Y₂O₃ gate oxides with Si”, B. W. Busch, J. Kwo, M. Hong, J.P. Mannaerts, B.J. Sapjeta, W.H. Schulte, E. Garfunkel, and T. Gustafsson, Appl. Phys. Lett. 79, 2447, 2001. 

152. “Energy-band parameters at the GaAs- and GaN-Ga₂O₃(Gd₂O₃) interfaces”, T. S. Lay, M. Hong, J. Kwo, J. P. Mannaerts, W. H. Hung, and D. J. Huang, Solid State Electronics, 45, pp. 1679-1682, 2001.

153. “New Phase Formation of Gd₂O₃ films on GaAs (100)”, A. R. Kortan, M. Hong, J. Kwo, J. P. Mannaerts, J. J. Krajewski, N. Kopylov, C. Steiner, B. Bolliger, and M. Erbudak, J. Vac. Sci. Technol. B 19(4), p. 1434, 2001. (The paper was presented at 19^th North American Conference on Molecular Beam Epitaxy, October 16-18, 2000, Arizona State University, Tempe, Arizona.) 

154. “C-V and G-V characterization of Ga₂O₃(Gd₂O₃)/GaN capacitor with low interface state density”, T. S. Lay, W. D. Liu, M. Hong, J. Kwo, and J. P. Mannaerts, Electronics Letters, Vol. 37, No. 9, 595, 2001.

155. “Properties of High k Gate Dielectrics Gd₂O₃ and Y₂O₃ for Si”, J. Kwo, M. Hong, A. R. Kortan, K. L. Queeney, Y. J. Chabal, R. L. Opila, Jr., D. A. Muller, S. N. G. Chu, B. J. Sapjeta, T. S. Lay, J. P. Mannaerts, T. Boone, H. W. Krautter, J. J. Krajewski, A. M. Sergent, and J. M. Rosamilia, J. Appl. Phys. Vol. 89, No. 7, pp.3920-3927, 1 April, 2001.

156. “Probing the microscopic compositions at Ga₂O₃(Gd₂O₃)/GaAs interface by core level photoelectron spectroscopy”, T. S. Lay, K. H. Huang, W. H. Hung, M. Hong, J. Kwo, and J. P. Mannaerts, Solid State Electronics, 45, pp.423-426, 2001.

157. “Investigation of interfacial structures of oxides on GaAs substrates by HRTEM”, L. J. Chou and M. Hong, INSTITUTE OF PHYSICS CONFERENCE SERIES (169): 45-48 2001. (Microscopy of semiconducting materials 2001: proceedings of the Royal Microscopical Society Conference, Oxford University, 25-29 March 2001 / edited by A G Cullis and J L Hutchison.)

158. “Structural modifications of the Gd₂O₃ (110) films on GaAs (100)”, C. Steiner, B. Bolliger, M. Erbudak, M. Hong, A. R. Kortan, J. Kwo, and J. P. Mannaerts, Phys. Rev. B rapid communications, 62, No.16, R10614, 15 October, 2000.